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Anqing A Cui

from Palo Alto, CA
Age ~57
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Also known as:
Anqing Cui, Anging Cui
Phone and address:
619 Alger Dr, Palo Alto, CA 94306
Related to:
Ganyu LuGanyu Lu, 59Erjie Cui
Connected to:
Frances Cui, 29Hans H Cui, 60Jian Cui, 59Joseph R Cui, 46Junfeng Cui, 44Ningzhuo Cui, 49Tiffany Cui, 46Xiaobo Cui, 35Yong Cui, 56Toni L Cuillo, 52

Anqing Cui Phones & Addresses

  • 619 Alger Dr, Palo Alto, CA 94306
  • Stanford, CA
  • North Las Vegas, NV
  • Sunnyvale, CA
  • Piscataway, NJ

Good Group

Us Patents

Substrate Support With Substrate Heater And Symmetric Rf Return

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US Patent:
8618446, Dec 31, 2013
Filed:
Jun 30, 2011
Appl. No.:
13/173471
Inventors:
Yu Chang - San Jose CA, US
Anqing Cui - Palo Alto CA, US
William W. Kuang - Sunnyvale CA, US
Olkan Cuvalci - Sunnyvale CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
A21B 1/00
C23C 16/00
US Classification:
219391, 219390, 219405, 219411, 392416, 392418, 118724, 118725, 118 501, 118719, 118726, 118729, 118723 E
Abstract:
Apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a substrate support surface and a shaft; an RF electrode disposed in the substrate support proximate the substrate support surface to receive RF current from an RF source; a heater disposed proximate the substrate support surface to provide heat to a substrate when disposed on the substrate support surface, the heater having one or more conductive lines to provide power to the heater; a thermocouple to measure the temperature of a substrate when disposed on the substrate support surface; and a conductive element having an interior volume with the one or more conductive lines and the thermocouple disposed through the interior volume, the conductive element coupled to the RF electrode and having an electric field of about zero in the interior volume when RF current is flowed through the conductive element.

Multi-Zone Resistive Heater

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US Patent:
20030062359, Apr 3, 2003
Filed:
Sep 19, 2002
Appl. No.:
10/246865
Inventors:
Henry Ho - San Jose CA, US
Anqing Cui - Mountain View CA, US
Xiaoxiong Yuan - Cupertino CA, US
International Classification:
H05B003/68
US Classification:
219/444100, 219/468100
Abstract:
A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element, and the second heating element is offset from the first heating element in a plane substantially parallel to at least one of the first plane and the second plane.

Multi-Zone Resistive Heater

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US Patent:
20070125762, Jun 7, 2007
Filed:
Dec 1, 2005
Appl. No.:
11/293626
Inventors:
Anqing Cui - Sunnyvale CA, US
Binh Tran - San Jose CA, US
Alexander Tam - Union City CA, US
Jacob Smith - Santa Clara CA, US
R. Iyer - Santa Clara MN, US
Joseph Yudovsky - Campbell CA, US
Sean Seutter - San Jose CA, US
International Classification:
H05B 3/68
US Classification:
219444100
Abstract:
Apparatus, reactors, and methods for heating substrates are disclosed. The apparatus comprises a stage comprising a body and a surface having an area to support a substrate, a shaft coupled to the stage, a first heating element disposed within a central region of the body of the stage, and at least second and third heating elements disposed within the body of the stage, the at least second and third heating elements each partially surrounding the first heating element and wherein the at least second and third heating elements are circumferentially adjacent to each other.

Substrate Heating Method And Apparatus

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US Patent:
20080197125, Aug 21, 2008
Filed:
Feb 16, 2007
Appl. No.:
11/675856
Inventors:
ANQING CUI - Sunnyvale CA, US
Sean M. Seutter - San Jose CA, US
Jacob W. Grayson - Santa Clara CA, US
R. Suryanarayanan Iyer - St. Paul MN, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H05B 3/10
G06F 19/00
US Classification:
219548, 702 99
Abstract:
Embodiments of substrate heating methods and apparatus are provided herein. In one embodiment, a substrate heater is provided including a heater plate having a top surface and an opposing bottom surface, a recess formed in the top surface, the recess having a feature having an upper surface for supporting a substrate, wherein the depth from a bottom surface of the recess to the upper surface of the feature is at least 5 mils. One or more pads may be disposed in the recess for supporting a substrate. The heater plate may have a thickness of about 19 mm. One or more indentations may be formed in the bottom surface of the recess for altering the rate of heat transfer to a portion of a substrate disposed above the indentation during processing. The heater plate may be utilized in a process chamber for performing heat-assisted processes.

Multi-Zone Resistive Heater

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US Patent:
20090314762, Dec 24, 2009
Filed:
Jun 16, 2009
Appl. No.:
12/485160
Inventors:
Anqing Cui - Sunnyvale CA, US
Binh Tran - San Jose CA, US
Alexander Tam - Union City CA, US
Jacob W. Smith - Santa Clara CA, US
R. Suryanarayanan Iyer - Santa Clara CA, US
Joseph Yudovsky - Campbell CA, US
Sean M. Seutter - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H05B 3/68
US Classification:
2194441
Abstract:
Apparatus, reactors, and methods for heating substrates are disclosed. The apparatus comprises a stage comprising a body and a surface having an area to support a substrate, a shaft coupled to the stage, a first heating element disposed within a central region of the body of the stage, and at least second and third heating elements disposed within the body of the stage, the at least second and third heating elements each partially surrounding the first heating element and wherein the at least second and third heating elements are circumferentially adjacent to each other.

Plasma Reactor With A Ceiling Electrode Supply Conduit Having A Succession Of Voltage Drop Elements

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US Patent:
20100096085, Apr 22, 2010
Filed:
Oct 21, 2008
Appl. No.:
12/255492
Inventors:
OLKAN CUVALCI - Sunnyvale CA, US
Yu Chang - San Jose CA, US
William Kuang - Sunnyvale CA, US
Anqing Cui - Sunnyvale CA, US
Seshadri Ganguli - Sunnyvale CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23F 1/08
C23C 16/44
US Classification:
15634534, 118723 R
Abstract:
A bridge assembly includes an electrically insulating hollow tube or bridge having a pair of ends, the bridge being supported at one of the ends over the cylindrical side wall and being supported at the other of the ends over the electrode. The bridge assembly further includes a set of conductive rings surrounding the hollow tube and spaced from one another along the length of the bridge, and plural electrically resistive elements. Each of the resistive elements has a pair of flexible connectors, respective ones the resistive elements connected at their flexible connectors between respective pairs of the rings to form a series resistor assembly.

Cvd Apparatus For Improved Film Thickness Non-Uniformity And Particle Performance

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US Patent:
20100294199, Nov 25, 2010
Filed:
Apr 20, 2010
Appl. No.:
12/763522
Inventors:
BINH TRAN - Houston TX, US
ANQING CUI - Palo Alto CA, US
BERNARD L. HWANG - Santa Clara CA, US
SON T. NGUYEN - San Jose CA, US
ANH N. NGUYEN - Milpitas CA, US
SEAN M. SEUTTER - San Jose CA, US
XIANZHI TAO - San Jose CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
H01L 21/02
C23C 16/00
C23C 16/513
C23C 16/455
US Classification:
118723 R, 118715, 118722, 257E21002
Abstract:
Embodiments of the invention provide improved apparatus for depositing layers on substrates, such as by chemical vapor deposition (CVD). The inventive apparatus disclosed herein may advantageously facilitate one or more of depositing films having reduced film thickness non-uniformity within a given process chamber, improved particle performance (e.g., reduced particles on films formed in the process chamber), chamber-to-chamber performance matching amongst a plurality of process chambers, and improved process chamber serviceability.
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Anqing A Cui from Palo Alto, CA, age ~57 Get Report