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Emad Zawaideh Phones & Addresses

  • 7353 Melodia Ter, Carlsbad, CA 92009
  • Melodia Ter, Carlsbad, CA 92011
  • Palmdale, CA
  • 910 Monte Mira Dr, Encinitas, CA 92024
  • Solana Beach, CA
  • San Diego, CA
  • Rancho Santa Fe, CA
  • Santa Ana, CA

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Name / Title
Company / Classification
Phones & Addresses
Emad S. Zawaideh
Owner
Scientific Computing International
Whol Professional Equipment · Prepackaged Software Services Custom Computer Programing
6355 Corte Del Abeto, Carlsbad, CA 92011
(760) 930-3992, (760) 634-3822
Emad Zawaideh
President
SCI INSTRUMENTS INC
Scientific Instruments & Supplies Dealers
6355 Corte Del Abeto STE C-105, Carlsbad, CA 92011
(760) 930-3992

Us Patents

Nondestructive Optical Technique For Simultaneously Measuring Optical Constants And Thickness Of Thin Films

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US Patent:
7463355, Dec 9, 2008
Filed:
Jun 12, 2003
Appl. No.:
10/460089
Inventors:
Emad Zawaideh - Carlsbad CA, US
Assignee:
Scientific Computing International - Carlsbad CA
International Classification:
G01J 4/00
US Classification:
356364, 356369, 356367
Abstract:
Optical systems and methods that simultaneously measure optical constants (n, k) and thickness of thin films. The systems and methods use of differential polarimetry (differential analysis of spectroscopic multi-angle reflection and ellipsometric data) to measure optical constants (n k) and thickness of ultra-thin films.

Optical Metrology Systems And Methods

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US Patent:
7505133, Mar 17, 2009
Filed:
Jun 22, 2004
Appl. No.:
10/873735
Inventors:
Emad Zawaideh - Carlsbad CA, US
Javier Ruiz - Oceanside CA, US
Assignee:
SCI Instruments, Inc. - Carlsbad CA
International Classification:
G01J 4/001
US Classification:
356369
Abstract:
Metrology systems and methods that measure thin film thickness and or index of refraction of semiconductor wafers with at least one deposited or grown thin film layer. The present invention measures near normal incidence and grazing angle of incidence reflection (using reflected broadband UV, visible, and near infrared electromagnetic radiation) from a small region on a sample. Embodiments of the system selectively comprise a near-normal incidence spectrometer/ellipsometer, a high angle of incidence spectrometer/ellipsometer, or a combination of the two.

Optical Metrology Systems And Methods

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US Patent:
8319966, Nov 27, 2012
Filed:
Mar 12, 2009
Appl. No.:
12/403119
Inventors:
Emad Zawaideh - Carlsbad CA, US
Javier Ruiz - Oceanside CA, US
International Classification:
G01J 4/00
US Classification:
356364, 356368
Abstract:
Metrology systems and methods that measure thin film thickness and or index of refraction of semiconductor wafers with at least one deposited or grown thin film layer. The present invention measures near normal incidence and grazing angle of incidence reflection (using reflected broadband UV, visible, and near infrared electromagnetic radiation) from a small region on a sample. Embodiments of the system selectively comprise a near-normal incidence spectrometer/ellipsometer, a high angle of incidence spectrometer/ellipsometer, or a combination of the two.

Multi-Channel Surface Plasmon Resonance Instrument

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US Patent:
8330959, Dec 11, 2012
Filed:
Mar 23, 2010
Appl. No.:
12/729506
Inventors:
Christopher L. Claypool - Carlsbad CA, US
Emad S. Zawaideh - Carlsbad CA, US
International Classification:
G01N 21/55
US Classification:
356445, 422 8511, 422 8205, 4352875
Abstract:
A robust multichannel SPR instrument with exceptionally high sensitivity (

Nondestructive Optical Techniques For Simultaneously Measuring Optical Constants And Thicknesses Of Single And Multilayer Films

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US Patent:
58895922, Mar 30, 1999
Filed:
Mar 18, 1998
Appl. No.:
/040959
Inventors:
Emad Zawaideh - Encinitas CA
International Classification:
G01B 902
US Classification:
356357
Abstract:
An optical technique (apparatus and method based on the use of power spectral density analysis of spectroscopic multiple angle reflection and transmission data is disclosed. The apparatus and methods measure optical constants (n, k) and thicknesses of single and multilayer films. The apparatus and method provide for index determination with high accuracy (0. 00001).

Low Temperature Aluminum Nitride

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US Patent:
58775579, Mar 2, 1999
Filed:
Apr 1, 1996
Appl. No.:
8/627717
Inventors:
Emad S. Zawaideh - Encinitas CA
Assignee:
Raytheon Company - Lexington MA
International Classification:
H01L 21441
US Classification:
257748
Abstract:
A process for metallizing semiconductor devices is provided, wherein a plurality of aluminum contacts is formed. The plurality of aluminum contacts is at least partially nitrided in a nitrogen-containing plasma at a temperature of less than about 350. degree. C. The aluminum nitride layer or cap is capable of eliminating aluminum corrosion without affecting the electrical properties of the aluminum contacts.

Nondestructive Optical Techniques For Simultaneously Measuring Optical Constants And Thicknesses Of Single And Multilayer Films

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US Patent:
59992670, Dec 7, 1999
Filed:
Mar 8, 1999
Appl. No.:
9/263543
Inventors:
Emad Zawaideh - Encinitas CA
International Classification:
G01B 1106
US Classification:
356381
Abstract:
An optical technique (apparatus and method based on the use of power spectral density analysis of spectroscopic multiple angle reflection and transmission data is disclosed. The apparatus and methods measure optical constants (n, k) and thicknesses of single and multilayer films. The apparatus and method provide for index determination with high accuracy (0. 00001).

Method Of Utilizing Iddq Tests To Screen Out Defective Parts

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US Patent:
61408328, Oct 31, 2000
Filed:
Jun 5, 1998
Appl. No.:
9/092387
Inventors:
Truc Q. Vu - Tustin CA
Emad S. Zawaideh - Encinitas CA
Nhan T. Do - Irvine CA
Glenn M. Kramer - Vista CA
Assignee:
Raytheon Company - Lexington MA
International Classification:
G01R 3126
G01R 3102
G01R 104
G06F 1100
US Classification:
324765
Abstract:
A method that uses effective widths of NMOS and PMOS devices in a digital circuit and their intrinsic junction and subthreshold leakage currents to produce a specification for IDDQ, the range of IDDQ, and the delta of IDDQ between pre- and post-overvoltage stress tests to screen out defective integrated circuits having excessive extrinsic current leakage. The present invention provides for a computer-implemented method that generates an indication of whether IDDQ values associated with integrated circuits that have been tested are within the IDDQ specification or not. This processing eliminates the need for time-intensive and costly burn-in testing on the integrated circuits.
Emad S Zawaideh from Carlsbad, CA, age ~62 Get Report