Emad S Zawaideh

7463355, Dec 9, 2008

Jun 12, 2003

10/460089

Emad Zawaideh - Carlsbad CA, US

Scientific Computing International - Carlsbad CA

G01J 4/00

356364, 356369, 356367

Optical systems and methods that simultaneously measure optical constants (n, k) and thickness of thin films. The systems and methods use of differential polarimetry (differential analysis of spectroscopic multi-angle reflection and ellipsometric data) to measure optical constants (n k) and thickness of ultra-thin films.

7505133, Mar 17, 2009

Jun 22, 2004

10/873735

Emad Zawaideh - Carlsbad CA, US
Javier Ruiz - Oceanside CA, US

SCI Instruments, Inc. - Carlsbad CA

G01J 4/001

356369

Metrology systems and methods that measure thin film thickness and or index of refraction of semiconductor wafers with at least one deposited or grown thin film layer. The present invention measures near normal incidence and grazing angle of incidence reflection (using reflected broadband UV, visible, and near infrared electromagnetic radiation) from a small region on a sample. Embodiments of the system selectively comprise a near-normal incidence spectrometer/ellipsometer, a high angle of incidence spectrometer/ellipsometer, or a combination of the two.

8319966, Nov 27, 2012

Mar 12, 2009

12/403119

Emad Zawaideh - Carlsbad CA, US
Javier Ruiz - Oceanside CA, US

G01J 4/00

356364, 356368

Metrology systems and methods that measure thin film thickness and or index of refraction of semiconductor wafers with at least one deposited or grown thin film layer. The present invention measures near normal incidence and grazing angle of incidence reflection (using reflected broadband UV, visible, and near infrared electromagnetic radiation) from a small region on a sample. Embodiments of the system selectively comprise a near-normal incidence spectrometer/ellipsometer, a high angle of incidence spectrometer/ellipsometer, or a combination of the two.

8330959, Dec 11, 2012

Mar 23, 2010

12/729506

Christopher L. Claypool - Carlsbad CA, US
Emad S. Zawaideh - Carlsbad CA, US

G01N 21/55

356445, 422 8511, 422 8205, 4352875

A robust multichannel SPR instrument with exceptionally high sensitivity (

58895922, Mar 30, 1999

Mar 18, 1998

/040959

Emad Zawaideh - Encinitas CA

G01B 902

356357

An optical technique (apparatus and method based on the use of power spectral density analysis of spectroscopic multiple angle reflection and transmission data is disclosed. The apparatus and methods measure optical constants (n, k) and thicknesses of single and multilayer films. The apparatus and method provide for index determination with high accuracy (0. 00001).

58775579, Mar 2, 1999

Apr 1, 1996

8/627717

Emad S. Zawaideh - Encinitas CA

Raytheon Company - Lexington MA

H01L 21441

257748

A process for metallizing semiconductor devices is provided, wherein a plurality of aluminum contacts is formed. The plurality of aluminum contacts is at least partially nitrided in a nitrogen-containing plasma at a temperature of less than about 350. degree. C. The aluminum nitride layer or cap is capable of eliminating aluminum corrosion without affecting the electrical properties of the aluminum contacts.

59992670, Dec 7, 1999

Mar 8, 1999

9/263543

Emad Zawaideh - Encinitas CA

G01B 1106

356381

An optical technique (apparatus and method based on the use of power spectral density analysis of spectroscopic multiple angle reflection and transmission data is disclosed. The apparatus and methods measure optical constants (n, k) and thicknesses of single and multilayer films. The apparatus and method provide for index determination with high accuracy (0. 00001).

61408328, Oct 31, 2000

Jun 5, 1998

9/092387

Truc Q. Vu - Tustin CA
Emad S. Zawaideh - Encinitas CA
Nhan T. Do - Irvine CA
Glenn M. Kramer - Vista CA

Raytheon Company - Lexington MA

G01R 3126
G01R 3102
G01R 104
G06F 1100

324765

A method that uses effective widths of NMOS and PMOS devices in a digital circuit and their intrinsic junction and subthreshold leakage currents to produce a specification for IDDQ, the range of IDDQ, and the delta of IDDQ between pre- and post-overvoltage stress tests to screen out defective integrated circuits having excessive extrinsic current leakage. The present invention provides for a computer-implemented method that generates an indication of whether IDDQ values associated with integrated circuits that have been tested are within the IDDQ specification or not. This processing eliminates the need for time-intensive and costly burn-in testing on the integrated circuits.