Inventors:
Nicholas Alan Ryza - Austin TX, US
Assignee:
TOKYO ELECTRON LIMITED - Tokyo
International Classification:
H05B 3/68
Abstract:
A method and processing system for controlling and rapidly lowering the temperature of a hotplate used for supporting and heat-treating wafers. The method includes maintaining the hotplate at a first hotplate temperature by applying a first heating power to the hotplate and heat-treating a wafer on an upper surface of the hotplate, removing the heat-treated wafer from the upper surface, exposing the upper surface to an inert gas stream for rapid cool down of the hotplate from the first hotplate temperature to a second hotplate temperature, and maintaining the hotplate at the second hotplate temperature by applying a second heating power to the hotplate and heat-treating another wafer on the upper surface of the hotplate.